Pulsed laser diodes feature power output up to 130W
LASER COMPONENTS have announced a recent high power pulsed laser diodes at 905nm. These are available as single chips and stacked arrays with a power output of up to 130W. The high reliability and temperature stability of these devices is due to the AlGaAs structure. Due to their high quality beam characteristics these diodes are used in range finding, surveying equipment, laser radar, speed monitoring, security barrier and optical applications.
These devices are capable of delivering output power of up to 130W. For example the company's stacked chip devices can deliver output power as high as 130W from an active area of 400x340µm. These 905nm PLDs are available in a TO-18, 5.6mm, 9mm or 8-32 Coax housing as well as a chip on a ceramic submount.
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