Photodiodes

Displaying 11 - 20 of 26

Photoreceiver makes optical alignment easy

Photoreceiver makes optical alignment easy
A photoreceiver which consists of a photodiode followed by a high-end, variable gain transimpedance amplifier has been introduced by LASER COMPONENTS. The OE-300 features relatively large sized detectors, which make optical alignment easy and also ensure a very high coupling efficiency when using the Si models together with the optionally available fibre optic adapters PRA-FC/SMA.
5th June 2015

IR emitter & PIN photodiode combine for oximeter detection

IR emitter & PIN photodiode combine for oximeter detection
EVERLIGHT ELECTRONICS has introduced an IR emitting diode in a miniature SMD package and a high speed, high sensitive PIN photodiode. Both measuring 6x4.8x1.1mm for oximeter detector applications, the IRR60-48C/TR8 IR emitter and the PD60-48C/TR8 PIN photodiode feature optimised red and IR wavelengths of 660 and 905nm, respectively.
29th May 2015

InGaAs photodioides suit visible laser detection

InGaAs photodioides suit visible laser detection
  Classically, visible laser detection is an application that would only be suited to silicon photodiodes. However, Laser Components UK has announced that, for designers seeking devices with greater temperature stability, its panchromatic InGaAs photodoides come up trumps.
13th May 2015


0.18 & 0.35μm UV photodiodes offer high quantum efficiency

0.18 & 0.35μm UV photodiodes offer high quantum efficiency
X-FAB Silicon Foundries has announced the expansion of its 0.18 and 0.35μm device portfolio with highly sensitive ultraviolet photodiodes, the first of its kind developed by a silicon foundry. Easily integrated into designs implemented in X-FAB’s modular XH018 and XH035 CMOS process technologies, X-FAB says that the diodes provide the highest quantum efficiency available from a silicon foundry.
30th April 2015

Deuterium light source & PDA added to photonics range

Deuterium light source & PDA added to photonics range
Hamamatsu Photonics has introduced two products to its range, the company's first high brightness deuterium (H2D2) light source (left) featuring a deuterium lamp that emits UV light at intensity 6 times higher than the company's conventional L2D2 range of lamps, and a back illuminated 16 channel PhotoDiode Array (PDA), designed for use in X-ray non-destructive testing applications.
5th February 2015

Back-side illumination results in crisper, sharper images

Back-side illumination results in crisper, sharper images
Utilising advanced Back-Side Illuminated (BSI) pixel technology and 65nm copper process technology to offer outstanding image quality and energy efficiency, Samsung has announced a 28MP APS-C CMOS image sensor for digital cameras. Currently in mass production, the S5KVB2 is designed into Samsung’s compact system camera, the NX1.
2nd December 2014

Avalanche photodiodes have an edge length of 40mm

Avalanche photodiodes have an edge length of 40mm
LASER COMPONENTS has released a new iteration of the tremendously successful LCSA and LCIA avalanche photodiodes, called the A-CUBE.  These highly miniaturised modules have an edge length of only 40mm and can be used for fW optical power detection with a direct RF output and high bandwidth capabilities.
25th November 2014

Robust PIN photodiodes provide 2nA dark current

Robust PIN photodiodes provide 2nA dark current
Vishay Intertechnology is broadening its optoelectronics portfolio with the introduction of two automotive-grade, high-speed, silicon PIN photodiodes, in top-view, surface-mount packages measuring 5x4x0.9mm. Offering a large sensitive area of 7.5mm2, the VEMD5010X01 and VEMD5110X01 provide high radiant sensitivity with a reverse light current of 48µA and a very low dark current of 2nA for automotive, industrial, consumer, and medical applications.
17th November 2014

Photodiodes provide 9.5µA high reverse light current

Photodiodes provide 9.5µA high reverse light current
Targeting photo detection in applications such as light curtains, light barriers, metering systems, switches and rain and sun sensors, Vishay has announced two automotive-grade high-speed silicon PIN photodiodes. The VEMD6010X01 and VEMD6110X01 provide a high reverse light current of 9.5µA (three times that of previously released devices, according to Vishay) and a very low dark current of 1nA.
11th September 2014

Photovoltaic couplers increase isolation voltage to 3750Vrms

Photovoltaic couplers increase isolation voltage to 3750Vrms
Designed for use in measuring instruments, as MOSFET gate drivers or the replacement of mechanical relays, Toshiba Electronics Europe has announced the TLP3905 and TLP3906 photovoltaic couplers. The devices expand application possibilities by increasing the maximum operating temperature to 125°C and increasing the minimum isolation voltage to 3750Vrms.
28th August 2014


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