InGaAs photodiode designed for near infrared spectrophotometry

15th August 2016
Posted By : Daisy Stapley-Bunten
InGaAs photodiode designed for near infrared spectrophotometry


The InGaAs linear image sensor consisting of 512 pixels with a 25µm pixel pitch has been introduced by Hamamatsu Photonics. The G12230-512WB employs two InGaAs chips of different cut-off wavelengths, giving it a spectral response range of 950 to 2150nm.

As each pixel from the InGaAs photodiode array is read in charge integration mode from the CMOS chip, this allows for high sensitivity and stable operation within a wide spectral response range.

The package is hermetically sealed providing excellent reliability. The device has two external conversion efficiency types which can be selected for your application from the signal processing circuit on the CMOS chip.

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