InGaAs photodiode designed for near infrared spectrophotometry

15th August 2016
Posted By : Daisy Stapley-Bunten
InGaAs photodiode designed for near infrared spectrophotometry

 

The InGaAs linear image sensor consisting of 512 pixels with a 25µm pixel pitch has been introduced by Hamamatsu Photonics. The G12230-512WB employs two InGaAs chips of different cut-off wavelengths, giving it a spectral response range of 950 to 2150nm.

As each pixel from the InGaAs photodiode array is read in charge integration mode from the CMOS chip, this allows for high sensitivity and stable operation within a wide spectral response range.

The package is hermetically sealed providing excellent reliability. The device has two external conversion efficiency types which can be selected for your application from the signal processing circuit on the CMOS chip.


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

CES 2018
9th January 2018
United States of America Las Vegas, Nevada
Developing wearable products: technology and opportunities
17th January 2018
United Kingdom Cocoon Networks, London
Smart Mobility Executive Forum
12th February 2018
Germany Berlin
embedded world 2018
27th February 2018
Germany Nuremberg
Industry 4.0 Summit 2018
28th February 2018
United Kingdom Manchester