Cree has released an application note describing the accuracy of its large signal models for RF power transistors, which allow RF design engineers to reduce PA design iterations, design time and development costs.

Cree has demonstrated that its SiC MOSFET and diode technologies enable previously unattainable levels of power density in string solar inverter products, yielding efficiencies greater than 99.1% at peak, at 20% of the average size and weight of today’s silicon-based inverter units.

Cree is exhibiting and speaking at this year’s GOMACTech (Government Microcircuit Applications and Critical Technology Conference), which will take place on the 23rd to 26th of March in St. Louis, Missouri.

This year at Applied Power Electronics Conference and Exposition (APEC), 15th to 19th March in North Carolina, Cree is exhibiting at booth #1417 and speaking at the conference. This year marks the 30th anniversary of the conference, which focuses on the practical and applied aspects of the power electronics business.

Addressing demand for components with a nominal voltage rating slightly higher than 600V, Cree has expanded its SiC Schottky diode portfolio with the addition of four 650V diodes. The Cree Z-Rec diodes, automotive qualified to AEC-Q101, enable high efficiency power systems with improved reliability, simplicity, and total cost.

To address the needs of small cell designers, Cree has introduced the CDPA35045 asymmetric Doherty Power Amplifier (PA) reference design for the 3.5-3.7GHz band. This band is an additional spectrum space intended to complement small cell technology by providing increased wireless system capacity for both licensed wireless carrier services and unlicensed public use, such as WiFi.

Providing all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable half bridge circuit, Cree has introduced a MOSFET design kit. Quick and easy to assemble and use, the design kit enables comparative testing between IGBTs and Cree MOSFETs, and provides an effective layout example for properly driving Cree MOSFETs with minimal ringing.

A new SPICE model introduced by Cree increases the design-in support for the C2M Series SiC MOSFET power devices and demonstrates the benefits of Cree SiC MOSFETs—including the new C2M0025120D device, which recently shattered the on-resistance barrier by delivering 1200V of blocking voltage with an on-resistance of only 25mOhms—in circuit simulations.

A 1.2kV all-SIC six pack module enables an increase in the power rating of inverters to 50 per cent while reducing power losses by 50 per cent to increase efficiency by 5 per cent. The device is based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky diode technology. The all-SiC 1.2 kV, 20A six-pack features the industry’s lowest switching losses due to the zero turn-off tail current in the MOSFET and the zero reverse recovery current ...

Dr. Christopher Harris, Cree’s European business development manager will present “Using Cree GaN Large Signal Models in Microwave Office Simulation Tools” at the RF/Microwave PA Forum at European Microwave Week (EuMW) in Rome (Oct 7-9).  

SiC MOSFETs, manufactured by Cree, have been selected by Sanix for use within its 9.9kW three-phase solar inverter. The 80Ω C2M0080120D MOSFETs will be utilised in the primary power conversion stage of the solar inverter, which is designed for use in the construction of commercial photovoltaic systems in the Japanese solar energy market.

Cree's LMH2 LED module is the only LED module delivering up to 108 lumens-per-watt light-source efficacy combined with 90+ CRI in all available color temperatures. The LMH2 LED module is available in a range of lumen (850lm - 8,000lm), color temperature (2700K - 4000K) and two dimming options to enable lighting manufacturers to address a wide range of lighting applications with just one light source, providing investment protection and speeding t...

The OSQ Series LED area and flood luminaire has a low profile design adding architectural appeal to any general area or lighting space -- walkways, internal roadways, parking lots or even flood lighting applications.

Packaged in industry-standard 62mm housing, the CAS300M12BM2 300A, 1.2kV half-bridge module has been introduced by Cree. This silicon-carbide (SiC) module reduces energy loss due to switching by more than five times compared to the equivalent silicon solution, according to Cree. The company has also claimed that this best-in-class efficiency enables for the first time all-SiC high power converters rated up to the megawatt level.

Cree has claimed to have shattered the on-resistance barrier of traditional 1200V MOSFET technology by introducing the industry’s first commercially available silicon carbide (SiC) 1200V MOSFET with an RDS(ON) of 25mΩ in an industry standard TO-247-3 package. The C2M0025120D MOSFET is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction heating systems, EV charging systems, and medical CT application...

Expanding the company's Z-Rec Schottky diode portfolio, Cree announces two discrete 650V SiC rectifiers. The C5D50065D and CVFD20065A deliver ultrafast switching frequencies, higher efficiencies, improved thermal characteristics, enhanced reliability, simplified circuit design, and reduced costs to power electronic systems.

Cree LED bulbs look and light like the incandescent bulbs you love, but are priced significantly lower than competing LED lighting.

The LS Series LED surface ambient luminaire delivers 90 lumens per watt of Cree TrueWhite Technology 92 CRI illumination. Designed in a slim architectural form factor making it ideal for surface ambient applications in new construction and upgrade applications. Flexible mounting allows for individual mount or continuous row applications for surface, suspended, pendant and cove installations.

Cree demonstrates how to design custom RF integrated circuits using Cree's Process Design Kit (PDK) for the Microwave Office (MWO) simulation tool platform. The highly accurate PDK provide a very high degree of first-pass design success.

Believed to be the industry’s first commercially available family of 50A SiC rectifiers, Cree has announced the CPW5 Z-Rec high-power SiC Schottky diodes. The diodes are suitable for use in high power systems from 50kW to over 1MW, addressing applications such as solar / PV inverters, industrial power supplies, induction heating, battery charging stations, wind turbine converters and traction inverters.