Richardson RFPD has published a new Silicon Carbide (SiC) Products Brochure featuring the latest products from Cree, Microsemi, Powerex and Vincotech. The 8-page quick reference guide highlights SiC Schottky diodes (600V, 650V, 1200V and 1700V, 1A – 60A), SiC MOSFETs (1200V and 1700V), full SiC modules (1200V, up to 270A) and Si/SiC hybrid modules (600V – 1200V, up to 116A).  

Richardson RFPD has announced availability and full design support capabilities for four new 650V Silicon Carbide (SiC) Schottky diodes from Microsemi. The new devices are the latest addition to Microsemi's SiC Schottky product family.

Richardson RFPD has the SD4933MR N-channel field-effect RF power transistor from ST Microelectronics.  It is intended for use in 50V industrial, scientific and medical (ISM) applications up to 100 MHz. The device benefits from the latest generation of environmentally-designed packaging and is ruggedised against cyclic high-moisture operating and severe storage conditions.

Richardson RFPD has immediate availability and full design support capabilities for a new absorptive, 50Ω RF single-pole, double-throw (SPDT) switch from Peregrine Semiconductor.  The PE42423 operates from 100MHz to 6GHz and features high linearity that remains invariant across the full supply range, as well as high power handling and high isolation.

Richardson RFPD now has a DC to 6GHz Envelope and TruPwr RMS (root mean square) Detector from Analog Devices(ADI). The device offers a high level of integration and functionality by combining two RF detector functions into one small chip, thereby simplifying designs and reducing BOM (bill of materials) cost.

Richardson RFPD has today announced its attendance and participation at the 2013 Power Conversion Intelligent Motion Europe exhibition. PCIM is Europe's leading meeting-point for specialists in power electronics and its applications in intelligent motion, renewable energy and energy management.