GaN-on-Silicon technology enhances large area LED die

18th November 2014
Posted By : Barney Scott
GaN-on-Silicon technology enhances large area LED die


Plessey announces the realisation of its high-performance, high-quality, high-volume large LED die, based on its GaN-on-Silicon technology. The large die benefits from three core features of the Plessey process: the low thermal resistance of silicon; a single-surface, emitter die design; and 6" wafer processing.

To exploit these benefits, Plessey has produced a 4.5x4.5mm die design that will generate up to 5W of blue light over a 400-480nm wavelength range. This die is produced as a technology demonstrator to enable meaningful engagement with customers to determine the optimum application fit.

Large area LED die help customers in many ways, particularly for Chip-on-Board (CoB) products, providing a simpler, more uniform light emitter whilst reducing die attach and wire bond overheads. The low thermal resistance of the silicon substrate enables easier thermal management, and enhanced reliability from lower temperature operation.

The die uses Plessey's vertical design structure that has a cathode top and anode bottom contacts, useful for scaling the effectiveness in applying large die. Combining 6" wafer processing with best-in-class across wafer uniformity, Plessey makes such large die a real commercial proposition.

David Owen, Marketing Director, Plessey, explains: "It is clear that the next wave of general lighting products will see LEDs applied in ways that truly exploit the benefits obtained through Plessey's leading GaN-on-Si technology. This announcement marks the start of a phase where we engage with our key partner customers in defining the commercial realisation of lighting products based on Plessey's large GaN-on-Silicon LED die."

Plessey's range of products for lighting applications will be showcased at LuxLive, ExCel London, 19th to 20th November, Stand D31.

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