Optoelectronics

New DFB-LD and APD from Mitsubishi Electric for 10GEPON

20th February 2012
ES Admin
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Mitsubishi Electric Corporation has introduced a distributed feedback laser diode (DFB-LD) dubbed the ML7xx42 and the PD8xx24 avalanche photodiode (APD). Both new devices have been designed specifically for use in optical network units (ONU) of symmetric 10 gigabit Ethernet passive optical networks (10G-EPON).
DFB-LD
The new distributed feedback laser diode ML7xx42 incorporates an AlGaInAs active layer providing 10mW of output power under low operating current even in high-temperature conditions. Due to an improved modulation bandwidth it is able to perform smoothly at 10Gbps. The DFB-LD is housed in a TO-CAN package with a diameter of 4.8mm and equipped with an aspherical lens cap providing a high coupling efficiency. ML7xx42 has its light emission peak at a wavelength of 1,270nm while the output power is 10mW at operating currents of less than 70mA. It is designed for the operating temperature range from -5 to +75°C.

APD
Mitsubishi Electric utilizes AlInAs for the multiplication layer of the new low-noise avalanche photodiode which provides an industry leading sensitivity of typically 31.5dBm. Packaged in a 5.4mm TO-CAN with a ball lens cap, the PD8xx24 operates in the 1,570nm wavelength band and has an APD responsivity of typically 0.8A/W, together with a bandwidth of typically 6.5GHz.

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