Opto Diode’s New, Medium Emission Angle, High-Power IR LEDs

28th March 2012

ES Admin

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Opto Diode introduces the third in a series of infrared (IR) LEDs, the OD-850L. Domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs), the new high optical output IR emitters feature a medium emission angle for optimum coverage with excellent power density. Similar to the recently introduced OD850W (wide angle emission) and the OD-850N (narrow angle emission) IR LEDs from Opto Diode, the new OD-850L is designed to replace the company’s current OD-880L (medium emission angle) device. The new emitters feature greater output power (nearly 50% more) with less degradation and higher stability than the legacy devices. In addition, the new 850nm wavelength is also better matched to photo transistors and opto integrated circuits (ICs). Ideal for industrial control tasks, the hermetically-sealed, standard TO-46 can is designed with gold-plated surfaces and window caps that are carefully welded to the case, for added durability.

Opto Diode’s OD-850L IR LEDs can be stored or operated at temperatures ranging from -40 degrees C to 100 degrees C. The convenient package is ideal for use in optical encoders and photoelectric controls. Peak emission wavelength is 850 nm, the total power output ranges from a minimum 25mW, with a typical output at 35mW, and peak forward current at 300mA. The medium emission angle IR LEDs are available for shipping now at $2.80 each, minimum order of 100 pieces.