Optocouplers protect & drive SiC & GaN power devices

12th February 2015
Posted By : Barney Scott
Optocouplers protect & drive SiC & GaN power devices

Avago has announced two sets of high speed gate drive optocoupler devices, the ACPL-P/W347 and ACPL-P/W349. These devices are 1.0A and 2.5A gate drive optocouplers designed to protect and drive fast switching next-gen power semiconductors like SiC and GaN MOSFETs and IGBTs in applications such as power inverters, motor drives, and switching power supplies.

Compared to Avago’s previous generation devices, the ACPL-P/W347 and ACPL-P/W349 support wider gate operating voltage up to 30V, enabling higher voltage drive for high power applications.

The devices feature a 110ns maximum propagation delay, an operating VCC range of 15-30V and a rail-to-rail output voltage. Maximum peak output currents for the devices are 2.5A (ACPL-P/W349) and 1.0A (ACPL-P/W347). Under-voltage lockout with hysteresis is featured, as is a minimum high common mode rejection of 50kV/μs. The compact SO6 package minimises PCB space and reduces cost.

The devices are safety-approved to the following CSA, UL and IEC standards: IEC/EN/DIN EN 60747-5-5: VIORM = 891 VPEAK (ACPL-P347/349), VIORM = 1,140 VPEAK (ACPL-W347/349), as well as UL1577: VISO = 3,750 VRMS (ACPL-P347/349), VISO = 5,000 VRMS (ACPL-W347/349).

“As SiC and GaN MOSFETs gain market adoption and expand into higher power industrial applications, higher performance gate drive optocoupler devices like the Avago ACPL-P/W347 and ACPL-P/W349 complement these fast switching power semiconductors in delivering maximum power conversion efficiency,” said Kheng-Jam Lee, Marketing Director, Isolation Products Division, Avago.

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SPIE Photonics Europe 2018
22nd April 2018
France Strasbourg