Photocouplers directly drive IGBTs & power MOSFETs

Posted By : Nat Bowers
Photocouplers directly drive IGBTs & power MOSFETs

Suitable for applications such as home appliances, inverters, factory automation and control equipment, Toshiba Electronics Europe has introduced two photocouplers. The TLP5701 provides a peak output current of ±0.6A which makes it suited for low-power IGBTs and power MOSFETs, while the TLP5702's ±2.5A peak output current makes it suitable for driving medium-power devices.

Operating over a temperature range from -40 to +110°C, the IC output photocouplers can directly drive low- to medium-power IGBTs and power MOSFETs. The devices utilise GaAlAs infrared LED and integrated high-gain, high-speed photodetector technology for high-performance operation.

Common-mode transient immunity of ±20kV/μs is guaranteed by an internal Faraday shield, while minimum isolation voltage rating of 5000Vrms enables use in designs requiring safety standard certification. The TLP5701 and TLP5702 offer maximum propagation delay time of 500 and 200ns, respectively.

Supplied in an ultra-miniature SO6L package measuring 10x3.8x2.1mm, the photocouplers provide guaranteed creepage and clearance distances of 8mm. The SO6L form factor is 54% the height of DIP8 packaged products and requires just 43% of the board mounting area. This enables the devices to be used in space-saving designs.

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