Offered in clear, untinted plastic packages, the IR emitters released today provide high radiant intensity of 1 mW/sr typical at 20 mA, up to 33% higher than comparable devices on the market, and fast switching times of 15 ns. The 940 nm VSMB10940 features GaAIAs multi quantum well technology and a low forward voltage of 1.3 V typical while the 850 nm VSMG10850 offers GaAIAs double hetero technology and a forward voltage of 1.4 V.
The VEMD10940F photodiode features a daylight blocking filter matched with 830 nm to 950 nm IR emitters, including the VSMG10850 and VSMB10940. The device offers a reverse light current of 3 µA, low dark current of 1 nA, 920 nm wavelength of peak sensitivity, and a low 0.1 %/K temperature coefficient of light current.
With their low profiles, the VSMG10850, VSMB10940, and VEMD10940F are optimized for use in IR touch panels for devices such as printer displays, eBook readers, smartphones, tablets, ultrabooks, and GPS units. The devices provide a floor life of 168 hours and moisture sensitivity level (MSL) of 3 in accordance with J-STD-020. The emitters and photodiode support lead (Pb)-free reflow soldering and conform to Vishay's Green standards.
Samples and production quantities of the new IR emitters and photodiode are available now, with lead times of six to eight weeks.