Photodiodes

Displaying 11 - 20 of 30

Avalanche photodiodes counts photons

Avalanche photodiodes counts photons
As an attractive alternative to the photomultiplier tube, LASER COMPONENTS is proud to manufacture the SAP500-series. Based on a 'reach-through' structure for excellent quantum efficiency, extremely low noise, low bulk dark current and high gain, these components can be operated in normal linear mode (Reverse Voltage < Breakdown Voltage) at gains of up to 250 or greater or in 'Geiger' mode (Reverse Voltage > Breakdown Voltage) to permit the detection of single photons.
3rd August 2016

Smallest photodetector for optical data transmission

Smallest photodetector for optical data transmission
Data traffic is growing worldwide. Glass-fibre cables transmit vast amounts of information over long distances at the speed of light. Once they have reached their destination, however, these optical signals have to be converted into electrical signals for subsequent processing. KIT researchers have now developed a novel type of photodetector that needs far less space than conventional ones.
2nd August 2016

Automotive grade PIN photodiodes deliver photoresponse linearity

Automotive grade PIN photodiodes deliver photoresponse linearity
  Vishay Intertechnology is broadening its optoelectronics portfolio with the introduction of six Automotive Grade, high-speed silicon PIN photodiodes that feature excellent photoresponse linearity for small signal detection.
1st March 2016


Photodiodes feature 1.75 or 2.8µm peak wavelength

Photodiodes feature 1.75 or 2.8µm peak wavelength
LASER COMPONENTS' Detector Group has announced the introduction of two IR detectors, the IG19 and IA35. The IG19 is an x-InGaAs photodiode with a peak wavelength of 1.75µm, making it suitable for applications that cannot be met spectrally with a regular InGaAs photodiode. The IG19X1000S4i with a 1mm chip diameter in a TO-46 housing is the standard product.
5th August 2015

Photoreceiver makes optical alignment easy

Photoreceiver makes optical alignment easy
A photoreceiver which consists of a photodiode followed by a high-end, variable gain transimpedance amplifier has been introduced by LASER COMPONENTS. The OE-300 features relatively large sized detectors, which make optical alignment easy and also ensure a very high coupling efficiency when using the Si models together with the optionally available fibre optic adapters PRA-FC/SMA.
5th June 2015

IR emitter & PIN photodiode combine for oximeter detection

IR emitter & PIN photodiode combine for oximeter detection
EVERLIGHT ELECTRONICS has introduced an IR emitting diode in a miniature SMD package and a high speed, high sensitive PIN photodiode. Both measuring 6x4.8x1.1mm for oximeter detector applications, the IRR60-48C/TR8 IR emitter and the PD60-48C/TR8 PIN photodiode feature optimised red and IR wavelengths of 660 and 905nm, respectively.
29th May 2015

InGaAs photodioides suit visible laser detection

InGaAs photodioides suit visible laser detection
  Classically, visible laser detection is an application that would only be suited to silicon photodiodes. However, Laser Components UK has announced that, for designers seeking devices with greater temperature stability, its panchromatic InGaAs photodoides come up trumps.
13th May 2015

0.18 & 0.35μm UV photodiodes offer high quantum efficiency

0.18 & 0.35μm UV photodiodes offer high quantum efficiency
X-FAB Silicon Foundries has announced the expansion of its 0.18 and 0.35μm device portfolio with highly sensitive ultraviolet photodiodes, the first of its kind developed by a silicon foundry. Easily integrated into designs implemented in X-FAB’s modular XH018 and XH035 CMOS process technologies, X-FAB says that the diodes provide the highest quantum efficiency available from a silicon foundry.
30th April 2015

Deuterium light source & PDA added to photonics range

Deuterium light source & PDA added to photonics range
Hamamatsu Photonics has introduced two products to its range, the company's first high brightness deuterium (H2D2) light source (left) featuring a deuterium lamp that emits UV light at intensity 6 times higher than the company's conventional L2D2 range of lamps, and a back illuminated 16 channel PhotoDiode Array (PDA), designed for use in X-ray non-destructive testing applications.
5th February 2015

Back-side illumination results in crisper, sharper images

Back-side illumination results in crisper, sharper images
Utilising advanced Back-Side Illuminated (BSI) pixel technology and 65nm copper process technology to offer outstanding image quality and energy efficiency, Samsung has announced a 28MP APS-C CMOS image sensor for digital cameras. Currently in mass production, the S5KVB2 is designed into Samsung’s compact system camera, the NX1.
2nd December 2014


Photodiodes documents


Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

Startups Magazine Launch Party: Financing a Startup
24th July 2018
United Kingdom WeWork Waterhouse Square, London
European Microwave Week 2018
23rd September 2018
Spain Ifema Feria De Madrid
IoT Solutions World Congress 2018
16th October 2018
Spain Barcelona
Engineering Design Show 2018
17th October 2018
United Kingdom Ricoh Arena, Coventry
Maintec 2018
6th November 2018
United Kingdom NEC, Birmingham