Photodiodes

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Avalanche photodiodes have an edge length of 40mm

Avalanche photodiodes have an edge length of 40mm
LASER COMPONENTS has released a new iteration of the tremendously successful LCSA and LCIA avalanche photodiodes, called the A-CUBE.  These highly miniaturised modules have an edge length of only 40mm and can be used for fW optical power detection with a direct RF output and high bandwidth capabilities.
25th November 2014

Robust PIN photodiodes provide 2nA dark current

Robust PIN photodiodes provide 2nA dark current
Vishay Intertechnology is broadening its optoelectronics portfolio with the introduction of two automotive-grade, high-speed, silicon PIN photodiodes, in top-view, surface-mount packages measuring 5x4x0.9mm. Offering a large sensitive area of 7.5mm2, the VEMD5010X01 and VEMD5110X01 provide high radiant sensitivity with a reverse light current of 48µA and a very low dark current of 2nA for automotive, industrial, consumer, and medical applications.
17th November 2014

Photodiodes provide 9.5µA high reverse light current

Photodiodes provide 9.5µA high reverse light current
Targeting photo detection in applications such as light curtains, light barriers, metering systems, switches and rain and sun sensors, Vishay has announced two automotive-grade high-speed silicon PIN photodiodes. The VEMD6010X01 and VEMD6110X01 provide a high reverse light current of 9.5µA (three times that of previously released devices, according to Vishay) and a very low dark current of 1nA.
11th September 2014


Photovoltaic couplers increase isolation voltage to 3750Vrms

Photovoltaic couplers increase isolation voltage to 3750Vrms
Designed for use in measuring instruments, as MOSFET gate drivers or the replacement of mechanical relays, Toshiba Electronics Europe has announced the TLP3905 and TLP3906 photovoltaic couplers. The devices expand application possibilities by increasing the maximum operating temperature to 125°C and increasing the minimum isolation voltage to 3750Vrms.
28th August 2014

Position sensing detectors to replace quadrant photodiodes

Position sensing detectors to replace quadrant photodiodes
While quadrant photodiodes have been dominating the non-contact position detection market for years, engineers and researchers are now looking to Position Sensing Detectors (PSDs) as an alternative. PSDs stand out from the competition when large area measurements with precise readings are required.
15th July 2014

Ultra-Compact InGaAs PIN Photodiode in Chip on Board Package

Ultra-Compact InGaAs PIN Photodiode in Chip on Board Package
Hamamatsu Photonics introduce the new G11777-003P InGaAs PIN photodiode, an ultra-compact near infrared detector available in a surface mount COB (Chip On Board) package.
20th June 2014

IR emitters and photodiodes are AEC-Q101-qualified

IR emitters and photodiodes are AEC-Q101-qualified
Offering an ultra-wide ±75° angle of half-intensity, Vishay has introduced two matched pairs of high-speed AEC-Q101-qualified 940nm IR emitters and silicon PIN photodiodes. The VSMB10940X01/VEMD10940FX01 feature a profile of 1mm while the VSMB11940X01/VEMD11940FX01 offer a profile of 0.6mm. The company claim that this is the industry's lowest profile for side-looking, AEC-Q101-qualified components.
6th March 2014

APD receivers achieve low noise without a TE cooler

APD receivers achieve low noise without a TE cooler
In order to reduce the overall noise of the detector/amplifier module, the capacitance connected to the amplifier has to be as small as possible. LASER COMPONENTS' H0 series of avalanche photodiode (APD) receivers make the connections as short as possible to make the parasitic capacitance as exceptionally low as the junction capacitance of the company's low-noise Silicon and InGaAs APDs (SARP-Series and IAG-Series).
4th February 2014

Surface-mount photodiodes with 35° angle of half sensitivity

Surface-mount photodiodes with 35° angle of half sensitivity
Vishay Intertechnology has broadened its optoelectronics portfolio with the introduction of new high-speed photo detectors in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. Offered with or without daylight blocking filters, featuring a ± 35° angle of half sensitivity, and AEC-Q101-qualified, the VEMD2xx3(SL) PIN photodiodes have a typical output current of 10 µA and an extremely low dark current of 1 nA while the VEMT2xx3(SL) phototransistors have a typical output current of 2.7 mA.
12th August 2013

New Hamamatsu Ultra-Compact InGaAs PIN Photodiode in Chip on Board Package

Hamamatsu Photonics introduce the new G11777-003P InGaAs PIN photodiode, an ultra-compact near infrared detector available in a surface mount COB package. Compared to a conventional metal packaged detector, the size of the G11777-003P is drastically reduced, whilst still maintaining a 0.3mm diameter active area. Package dimensions are 0.8 x 1.6 x 0.8mm.
3rd July 2013


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