Photodiodes

Displaying 31 - 35 of 35

Ultra-Compact InGaAs PIN Photodiode in Chip on Board Package

Ultra-Compact InGaAs PIN Photodiode in Chip on Board Package
Hamamatsu Photonics introduce the new G11777-003P InGaAs PIN photodiode, an ultra-compact near infrared detector available in a surface mount COB (Chip On Board) package.
20th June 2014

IR emitters and photodiodes are AEC-Q101-qualified

IR emitters and photodiodes are AEC-Q101-qualified
Offering an ultra-wide ±75° angle of half-intensity, Vishay has introduced two matched pairs of high-speed AEC-Q101-qualified 940nm IR emitters and silicon PIN photodiodes. The VSMB10940X01/VEMD10940FX01 feature a profile of 1mm while the VSMB11940X01/VEMD11940FX01 offer a profile of 0.6mm. The company claim that this is the industry's lowest profile for side-looking, AEC-Q101-qualified components.
6th March 2014

APD receivers achieve low noise without a TE cooler

APD receivers achieve low noise without a TE cooler
In order to reduce the overall noise of the detector/amplifier module, the capacitance connected to the amplifier has to be as small as possible. LASER COMPONENTS' H0 series of avalanche photodiode (APD) receivers make the connections as short as possible to make the parasitic capacitance as exceptionally low as the junction capacitance of the company's low-noise Silicon and InGaAs APDs (SARP-Series and IAG-Series).
4th February 2014


Surface-mount photodiodes with 35° angle of half sensitivity

Surface-mount photodiodes with 35° angle of half sensitivity
Vishay Intertechnology has broadened its optoelectronics portfolio with the introduction of new high-speed photo detectors in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. Offered with or without daylight blocking filters, featuring a ± 35° angle of half sensitivity, and AEC-Q101-qualified, the VEMD2xx3(SL) PIN photodiodes have a typical output current of 10 µA and an extremely low dark current of 1 nA while the VEMT2xx3(SL) phototransistors have a typical output current of 2.7 mA.
12th August 2013

New Hamamatsu Ultra-Compact InGaAs PIN Photodiode in Chip on Board Package

Hamamatsu Photonics introduce the new G11777-003P InGaAs PIN photodiode, an ultra-compact near infrared detector available in a surface mount COB package. Compared to a conventional metal packaged detector, the size of the G11777-003P is drastically reduced, whilst still maintaining a 0.3mm diameter active area. Package dimensions are 0.8 x 1.6 x 0.8mm.
3rd July 2013


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